HAF2015RJ_15 Datasheet, PDF (3/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2015RJ
Silicon N Channel MOS FET Series
Power Switching
REJ03G1141-0300
Rev.3.00
Aug 27, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (5 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Temperature hysteresis type.
• High density mounting.
Outline
RENESAS Package code: PRSP0008DD-A
(Package name: SOP-8 <FP-8DA> )
8765
1234
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8765
1234
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
DD
78
2
G
Gate resistor
Tmperature
sensing
circuit
Self
return
circuit
Gate
shutdown
circuit
1
MOS1
S
DD
56
4
G
Gate resistor
Tmperature
sensing
circuit
Self
return
circuit
Gate
shutdown
circuit
3
MOS2
S
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
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