HAF2015RJ_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2015RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive2ODprieveraOtiopenration}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
10 V
8V
4
6V
5V
Pulse Test
3
4V
2
V_GS = 3.5 V
1
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.25
Pulse Test
0.20
0.15
0.10
I_D = 1 A
0.5 A
0.05
0.2 A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 4 of 9
Maximum Safe Operation Area
50
Thermal shut down
20 _{Operation area}
10
100 _µs
5
2
1
0.5
0.2
0.1
OtlihmpisietearadretiboaynisRiDn_D^C_S^O_(o^p_n^e_{)ratioPnW(P=W1≤}0
Ta = 25°C
1 _ms
ms
1^N₀^ote_s)⁷
1 shot pulse
0.05 _{1 Drive Operation}
0.03
0.3 0.5 1 2 5 10 20 50 100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
2.5
2.0
Tc = –25°C
25°C
1.5
75°C
1.0
0.5
V_DS = 10 V
Pulse Test
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
200
V_GS = 5 V
100
10 V
50
20
Pulse Test
10
0.1 0.2 0.5 1 2
5 10 20
Drain Current I_D (A)