HAF2015RJ_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2015RJ
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
V_DSS
60
Gate to source voltage
V_GSS
16
V_GSS
–2.5
Drain current
Drain peak current
I_D
2
I_{D (pulse)} ^{Note 1}
4
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
I_DR
I_AP ^{Note 4}
E_AR ^{Note 4}
Pch ^{Note 2}
Pch ^{Note 3}
2
0.54
25
2
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Tch = 25°C, Rg > 50 Ω
(Ta = 25°C)
Unit
V
V
V
A
A
A
A
mJ
W
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Hysteresis temperature
Gate operation voltage
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_{IH (sd) 1}
I_{IH (sd) 2}
Tsd
Thr
V_OP
Min
Typ
Max Unit
Test Conditions
3.5
—
—
V
—
—
1.2
V
—
—
100
µA Vi = 5 V, V_DS = 0
—
—
50
µA Vi = 3.5 V, V_DS = 0
—
—
1
µA Vi = 1.2 V, V_DS = 0
—
0.53
—
mA Vi = 8 V, V_DS = 0
—
0.2
—
mA Vi = 3.5 V, V_DS = 0
—
175
—
°C Channel temperature
—
120
—
°C Channel temperature
3.5
—
12
V
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
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