HAF2015RJ_15 Datasheet, PDF (5/12 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

HAF2015RJ
Electrical Characteristics
Drain current
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
Symbol
I_D1
I_D2
V _{(BR) DSS}
V _{(BR) GSS}
V _{(BR) GSS}
I_GSS1
I_GSS2
I_GSS3
I_GSS4
I_{GS (op) 1}
I_{GS (op) 2}
I_DSS1
I_DSS2
Min
0.7
—
60
16
–2.5
—
—
—
—
—
—
—
—
Typ Max
—
—
—
10
—
—
—
—
—
—
— 100
—
50
—
1
— –100
0.53 —
0.2
—
—
10
—
10
V_{GS (off)}
R_{DS (on)}
R_{DS (on)}
|y_fs|
Coss
1.4
—
2.5
— 130 200
— 110 160
0.5 2.5
—
— 139 —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
t_{d (on)}
t_r
t_{d (off)}
t_f
V_DF
t_rr
—
4.2
—
—
20
—
—
1
—
—
1
—
— 0.82 —
—
55
—
Over load shut down operation time ^Note6
t_os1
—
15
—
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
µA
V
mΩ
mΩ
S
pF
µs
µs
µs
µs
V
ns
ms
(Ta = 25°C)
Test Conditions
V_GS = 3.5 V, V_DS = 2 V
V_GS = 1.2 V, V_DS = 2 V
I_D = 10 mA, V_GS = 0
I_G = 500 µA, V_DS = 0
I_G = –100 µA, V_DS = 0
V_GS = 5 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_GS = 1.2 V, V_DS = 0
V_GS = –2.4 V, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS = 48 V, V_GS = 0
Ta = 125°C
I_D = 1 mA, V_DS = 10 V
I_D = 1 A, V_GS = 5 V ^{Note 5}
I_D = 1 A, V_GS = 10 V ^{Note 5}
I_D = 1 A, V_DS = 10 V ^{Note 5}
V_DS = 10 V, V_GS = 0
f = 1 MHz
I_D = 1 A
V_GS = 5 V
R_L = 30 Ω
I_F = 2 A, V_GS = 0
I_F = 2 A, V_GS = 0
di_F/dt = 50 A/µs
V_GS = 5 V, V_DD = 16 V
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
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