BCR10CS Datasheet, PDF (8/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Tj=150°C, VDRM applied
Tc=25°C, ITM=15A, Instantaneous measurement
Gate trigger voltage ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate trigger current ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ^{✽3 ✽4}
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
✽5
Tj=125°C/150°C
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
1.8
10/1
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Test conditions
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10²
7
5
3
2
Tj = 150°C
10¹
7
5
3
2
Tj = 25°C
10⁰
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
10⁰
2 3 4 5 7 10¹
2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002