BCR10CS Datasheet, PDF (11/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
140
Tj = 150°C
120
100
III QUADRANT
80
60
40 _{I QUADRANT}
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
2 ^VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
10¹
7 ^MINIMUM
5
CHARAC-
TERISTICS
VD = 200V
f = 3Hz
I QUADRANT
3 ^VALUE
2
10^{0 III QUADRANT}
7
10⁰ 2 3 5 7 10¹
23
5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
2
IRGT III
10²
7
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
2 ^VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 12550°C
IT = 4A
τ = 500µs
VD = 200V
10¹
f = 3Hz
7
5
I QUADRANT
III QUADRANT
3
2 ^MINIMUM
CHARAC-
10^{0 TERISTICS}
VALUE
7
10⁰ 2 3 5 7 10¹
23
5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Mar. 2002