BCR10CS Datasheet, PDF (12/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
LOAD
C1
R1
C0 R0
C1 = 0.1~0.47µF
R1 = 47~100Ω
C0 = 0.1µF
R0 = 100Ω
Mar. 2002