BCR10CS Datasheet, PDF (4/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
10²
7
5
3
2 ^{VGM = 10V}
10¹
7
PG(AV) =
PGM = 5W
5
0.5W
3 _{VGT = 1.5V}
2
IGM = 2A
10⁰
7
5
3
2
IRGT I
10^–1
10¹ 2 3
IFGT I, IRGT III
VGD = 0.2V
5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
32
28
24 ^360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
IRGT I, IRGT III
2
10²
IFGT I
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³ 2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 _{OF CONDUCTION ANGLE}
120
100
80
60
360°
40 ^CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
02468
10 12 14 16
RMS ON-STATE CURRENT (A)
Mar. 2002