BCR10CS Datasheet, PDF (7/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
BCR10CS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
4
10.5 MAX
TYPE
∗
NAME
VOLTAGE
CLASS
1
5
0.8
Dimensions
in mm
4.5
1.3
0
+0.3
–0
0.5
• IT (RMS) ...................................................................... 10A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
123
∗ Measurement
point of case
24
temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
4 T2 TERMINAL
TO-220S
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
12
VDRM
Repetitive peak off-state voltage ^✽1
600
V
VDSM
Non-repetitive peak off-state voltage ^✽1
720
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=128°C^✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
10
A
100
A
41.6
A²s
5
W
0.5
W
10
V
2
A
–40 ~ +150
°C
–40 ~ +150
°C
1.2
g
Mar. 2002