BCR10CS Datasheet, PDF (2/12 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
BCR10CS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
4
10.5 MAX
TYPE
∗
NAME
VOLTAGE
CLASS
1
5
0.8
Dimensions
in mm
4.5
1.3
0
+0.3
–0
0.5
• IT (RMS) ...................................................................... 10A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
123
∗ Measurement
point of case
24
temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
4 T2 TERMINAL
TO-220S
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ^✽1
Non-repetitive peak off-state voltage ^✽1
Voltage class
12
600
720
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C^✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
Unit
10
A
100
A
41.6
A²s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
1.2
g
Mar. 2002