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2SC5975 Datasheet, PDF (7/18 Pages) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR | |||
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2SC5975
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
â.2
â.4
â.6
â.8 â1
â10
â5
â4
â3
â2
â1.5
Condition: VCE = 3 V , Zo = 50 â¦
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S21 Parameter vs. Frequency
Scale: 10 / div.
50
40
30
20
10
Condition: VCE = 3 V , Zo = 50 â¦
100 to 5100 MHz (100 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S12 Parameter vs. Frequency
Scale: 0.1 / div.
0.5
0.4
0.3
0.2
0.1
Condition: VCE = 3 V , Zo = 50 â¦
100 to 5100 MHz (100 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
â.2
â.4
â.6
â.8 â1
â10
â5
â4
â3
â2
â1.5
Condition: VCE = 3 V , Zo = 50 â¦
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
Rev.1.00, Jul.06.2004, page 7 of 17
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