2SC5975 Datasheet, PDF (1/18 Pages) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

2SC5975
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Features
• High gain bandwidth product
f_T = 20 GHz typ.
• High power gain and low noise figure;
PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz
REJ03G0381-0100Z
Rev.1.00
Jul.06.2004
Outline
MFPAK-4
3
2
WU-
4
1
Note: Marking is “WU-”.
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector power dissipation
Pc^*1
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Ratings
12
4
1.5
35
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.1.00, Jul.06.2004, page 1 of 17