2SC5975 Datasheet, PDF (5/18 Pages) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

2SC5975
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 _–1
–5
–4
–3
–2
–1.5
Condition: VCE = 1 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S21 Parameter vs. Frequency
Scale: 10 / div.
50
40
30
20
10
Condition: VCE = 1 V , Zo = 50 Ω
100 to 5100 MHz (100 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S12 Parameter vs. Frequency
Scale: 0.1 / div.
0.5
0.4
0.3
0.2
0.1
Condition: VCE = 1 V , Zo = 50 Ω
100 to 5100 MHz (100 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
–10
–.2
–.4
–.6
–.8 _–1
–5
–4
–3
–2
–1.5
Condition: VCE = 1 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
Rev.1.00, Jul.06.2004, page 5 of 17