2SC5975 Datasheet, PDF (3/18 Pages) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

2SC5975
Main Characteristics
Collector Power Dissipation Curve
200
Value on PCB
(FR-4 : 40 x 40 x 1.6 mm
150
Double side)
100
50
0
0
50
100
150
200
Ambient Temperature Ta (°C)
200
180
160
140
120
100
80
60
40
20
0
1
DC Current Transfer Ratio vs.
Collector Current
2V
3V
V_CE = 1 V
10
100
Collector Current I_C (mA)
Emitter Input Capacitance vs.
Emitter to Base Voltage
1
0.9
I_C = 0
f = 1 MHz
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Emitter to Base Voltage V_EB (V)
Typical Output Characteristics
20
200 µA
180 µA
18
160 µA
16
140 µA
14
120 µA
12
100 µA
10
80 µA
8
60 µA
6
40 µA
4
IB = 20 µA
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Collector to Emitter Voltage V_CE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
0.5
I_E = 0
f = 1 MHz
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector to Base Voltage V_CB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.3
Emitter grounding
0.25
f = 1 MHz
0.2
0.15
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector to Base Voltage V_CB (V)
Rev.1.00, Jul.06.2004, page 3 of 17