2SC5975 Datasheet, PDF (4/18 Pages) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

2SC5975
Gain Bandwidth Product vs. Collector Current
25
f = 2 GHz
3V
20
15
2V
10
V_CE = 1 V
5
0
1
10
100
Collector Current I_C (mA)
Noise Figure vs. Collector Current
5
V_CE = 1 V
4 ^{f = 1.8 GHz}
3
3V
2
2V
1
0
1
10
100
Collector Current I_C (mA)
MSG • MAG vs. Collector Current
30
f = 2 GHz
25
3V
20
15
MSG
2V
MAG
10
5
V_CE = 1 V
0
1
10
100
Collector Current I_C (mA)
S₂₁ Parameter vs. Collector Current
25 _{f = 2 GHz}
3V
20
2V
15
10
V_CE = 1 V
5
0
1
10
100
Collector Current I_C (mA)
Power Gain vs. Collector Current
20
f = 1.8 GHz
3V
18
16
14
2V
12
10
8
6
4
V_CE = 1 V
2
0
1
10
100
Collector Current I_C (mA)
Typical Transfer Characteristics
50
45
40
35
V_CE = 2 V
30
25
20
15
10
5
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Emitter to Base Voltage V_EB (V)
Rev.1.00, Jul.06.2004, page 4 of 17