2SC5975 Datasheet, PDF(2/18 Page) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

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2SC5975 Datasheet, PDF (2/18 Pages) Renesas Technology Corp – SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

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2SC5975

Electrical Characteristics

Item

Symbol Min

Collector cutoff current

ICBO

Collector cutoff current

ICEO

Emitter cutoff current

IEEO

DC current transfer ratio

hFE

Collector output capacitance

Cob

Gain bandwidth product

Power gain

Noise figure

Typ

110

0.3

17.5

1.15

Max

150

0.6

1.7

Unit

ÂµA

GHz

(Ta = 25Â°C)

Test Conditions

VCB = 12 V, IE = 0

VCE = 4 V, RBE = â

VEB = 1.5 V, IC = 0

VCE = 2 V, IC = 20 mA

VCB = 2 V, IE = 0, f = 1 MHz

VCE = 2 V, IC = 30 mA, f = 2 GHz

VCE = 2 V, IC = 30 mA, f = 1.8 GHz

VCE = 2 V, IC = 5 mA, f = 1.8 GHz

Rev.1.00, Jul.06.2004, page 2 of 17

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