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HD64F2329BVTE25V Datasheet, PDF (605/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents | |||
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Section 17 ROM
17.4 Overview of Flash Memory (H8S/2318 F-ZTAT, H8S/2317 F-ZTAT,
H8S/2315 F-ZTAT, H8S/2314 F-ZTAT)
17.4.1 Features
The H8S/2318 F-ZTAT, H8S/2317 F-ZTAT, H8S/2315 F-ZTAT, and H8S/2314 F-ZTAT have
384, 256, 128 kbytes of on-chip flash memory. The features of the flash memory are summarized
below.
⢠Four flash memory operating modes
⯠Program mode
⯠Erase mode
⯠Program-verify mode
⯠Erase-verify mode
⢠Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in
single-block units). To erase the entire flash memory, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 4-kbyte, 32-kbyte, and 64-kbyte
blocks.
⢠Programming/erase times
The flash memory programming time is 10.0 ms (typ.) for simultaneous 128-byte
programming, equivalent to 78 μs (typ.) per byte, and the erase time is 50 ms (typ.).
⢠Reprogramming capability
The flash memory can be reprogrammed a minimum of 100 times.
⢠On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
⯠Boot mode
⯠User program mode
⢠Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match
the transfer bit rate of the host.
⢠Flash memory emulation by RAM*
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
⢠Protect modes
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase/verify operations.
Rev.7.00 Feb. 14, 2007 page 571 of 1108
REJ09B0089-0700
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