RJH60T04DPQA1 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – 600V - 30A - IGBT

RJH60T04DPQ-A1
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj − c(t) = γs (t) • θj − c
θj − c = 0.6 °C/W, Tc = 25 °C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 2.1°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Diode clamp
Rg
V_GE
90%
L
D.U.T
I_C
V_CC
90%
10%
t_d(off)
t_f
10%
90%
10%
t_d(on) t_r
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
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