RJH60T04DPQA1 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 600V - 30A - IGBT

RJH60T04DPQ-A1
Main Characteristics
Maximum DC Collector Current vs.
Case Temperature
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
13 V
80
15 V
60
11 V
10 V
40
20
V_GE = 9 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
4
Ta = 25°C
Pulse Test
3
2
I_C = 60 A
30 A
15 A
1
8
12
16
20
Gate to Emitter Voltage V_GE (V)
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Preliminary
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
Ta = 25°C
1 shot pulse
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics
120
Ta = 150°C
Pulse Test
100
13 V
15 V
80
11 V
10 V
60
40
V_GE = 9 V
20
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
4
Ta = 150°C
Pulse Test
3
I_C = 60 A
2
30 A
15 A
1
8
12
16
20
Gate to Emitter Voltage V_GE (V)
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