RJH60T04DPQA1 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 600V - 30A - IGBT

RJH60T04DPQ-A1
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
Gate to emitter leak current
I_CES
⎯
I_GES
⎯
Gate to emitter cutoff voltage
V_GE(off)
4
Collector to emitter saturation voltage V_CE(sat)
⎯
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Turn-on delay time
t_d(on)
⎯
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Tail loss
E_tail
—
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
V_ECF
⎯
t_rr
⎯
Typ
⎯
⎯
⎯
1.50
1910
69
34
87
18
41
54
52
136
45
160
1.2
100
Preliminary
Max
100
±1
8
1.95
—
—
—
—
—
—
⎯
—
—
—
—
1.6
⎯
Unit
μA
μA
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
μJ
V
ns
(Ta = 25°C)
Test Conditions
V_CE = 600 V, V_GE = 0
V_GE = ±30 V, V_CE = 0
V_CE = 10V, I_C = 1 mA
I_C = 30 A, V_GE = 15V ^Note3
V_CE = 25 V
V_GE = 0
f = 1 MHz
V_GE = 15 V
V_CE = 300 V
I_C = 30 A
V_CC = 400 V
V_GE = 15 V
I_C = 30 A, Rg = 10 Ω
Inductive load
V_CC = 300 V, V_GE = 20 V
I_C = 50 A, Rg = 15 Ω
Tc = 125°C
Current resonance circuit
I_F = 20 A ^Note3
I_F = 10 A
di_F/dt = −100 A/μs
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
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