RJH60T04DPQA1 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 600V - 30A - IGBT

RJH60T04DPQ-A1
Switching Characteristics (Typical) (1)
1000
td(o_ff)
100
t_f
td(on)
10
tr
V_CC = 400 V, V_GE = 15 V
Rg = 10 Ω, Ta = 150°C
1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Tc = 150°C
100
td(o_ff)
t_f
td(on)
tr
10
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 10 Ω
td(o_ff)
100
t_f
td(on) ^tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10
1
Eon
Eoff
0.1
V_CC = 400 V, V_GE = 15 V
Rg = 10 Ω, Ta = 150°C
0.01
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Tc = 150°C
Eon
1
Eoff
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 10 Ω
1
Eon
Eoff
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
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