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| RJH60T04DPQA1 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 30A - IGBT | |||
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Preliminary Datasheet
RJH60T04DPQ-A1
600V - 30A - IGBT
Application:Current resonance circuit
R07DS1191EJ0200
Rev.2.00
Apr 02, 2014
Features
⢠Optimized for current resonance application
⢠Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
⢠Built in fast recovery diode in one package
⢠Trench gate and thin wafer technology
⢠High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 30 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
⢠Low tail loss
Etail = 160 μJ typ. (at VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125°C, current resonance circuit)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ⤠5 μs, duty cycle ⤠1%
Symbol
VCES
VGES
IC Note1
IC Note1
IC(peak) Note1
IDF(peak) Note2
PC
θj-c
θj-cd
Tj
Tstg
Ratings
600
±30
60
30
180
80
208.3
0.6
2.1
150
â55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
Page 1 of 7
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