RJH60T04DPQA1 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 600V - 30A - IGBT

RJH60T04DPQ-A1
Transfer Characteristics (Typical)
120
V_CE = 10 V
100 ^{Pulse Test}
80
60 ^{Ta = 150°C}
40
25°C
20
0
4
6
8
10 12 14
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
1 mA
4
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Preliminary
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
3.5
V_GE = 15 V
3.0 ^{Pulse Test}
2.5
I_C = 60 A
2.0
30 A
1.5
15 A
1.0
0.5
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Forward Current vs. Forward Voltage (Typical)
100
80
Ta = 25°C
150°C
60
40
20
V_GE = 0 V
Pulse Test
0
0 0.5 1.0 1.5 2.0 2.5 3.0
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CC = 480 V
600
300 V
12
V_CE
120 V
400
8
200
0
0
V_CC = 480 V
300 V
120 V
20 40 60
4
I_C = 30 A
Ta = 25°C
0
80 100
Gate Charge Qg (μC)
R07DS1191EJ0200 Rev.2.00
Apr 02, 2014
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