NP35N04YLG Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP35N04YLG
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
1
8
2
7
3
6
4
5
6.0 ±0.2
5.4 ±0.2
0.10 S
Chapter Title
0.73
0.4
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
3.18 ±0.2
0.6 ±0.15
0.8 ±0.15
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0182EJ0100 Rev.1.00
Oct 22, 2010
Page 6 of 6