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| NP35N04YLG Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP35N04YLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0182EJ0100
Rev.1.00
Oct 22, 2010
Description
The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Low on-state resistance
⯠RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A)
⯠RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
⢠Logic level drive type
⢠Gate to Source ESD protection diode built in
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
LEAD PLATING
PACKING
NP35N04YLG -E1-AY â1
Pure Sn (Tin)
Tape 2500 p/reel
NP35N04YLG -E2-AY â1
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) â2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current â3
Repetitive Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±35
±105
77
1.0
175
â55 to +175
22
48
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-C)
Rth(ch-A)
1.95
150
°C/W
°C/W
Notes: â1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) ⤠150°C, RG = 25 Ω
R07DS0182EJ0100 Rev.1.00
Oct 22, 2010
Page 1 of 6
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