NP35N04YLG Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP35N04YLG
Chapter Title
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
90
80
70
60
50
40
30
20
10
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
R ^{D S}₍⁽_V^{onG)SL=im1i0teVd)}
ID(pul s e)
PW=100_μs
10
Power Dissipat ion Limited
1
Tc=2 5C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A): 150°C/W
10
R_th(ch-C): 1.95°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
R07DS0182EJ0100 Rev.1.00
Oct 22, 2010
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