NP35N04YLG Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP35N04YLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
100
V_GS = 10 V
80
5V
60
40
20
Pulsed
0
0
0.5
1
1.5
2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
2.5
2
1.5
1
VDS = VGS
0.5
ID = 250 μA
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
15
10 ^{VGS = 5 V}
10 V
5
0
0.1
Pulsed
1
10
100
1000
I_D - Drain Current - A
R07DS0182EJ0100 Rev.1.00
Oct 22, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
10
T_A = 75°C
125°C
1
150°C
175°C
0.1
0.01
0.001
0
1
2
−55°C
−25°C
25°C
V_DS= 10 V
Pulsed
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
T_A = 75°C
25°C
−25°C
−55°C
10
175°C
150°C
125°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
15
ID = 35 A
17.5 A
10
7A
5
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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