NP35N04YLG Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP35N04YLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
ID = 17.5 A
20 ^Pulsed
VGS = 5 V
15
10 V
10
5
0
-100 -50 0
50 100 150 200
T_ch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(of f )
td( on)
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
VGS = 0 V
f = 1MHz
10
0.1
1
Coss
Cr ss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
V DS
10
20
12
ID = 35 A
10
8
V GS
6
4
2
0
30
40
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0182EJ0100 Rev.1.00
Oct 22, 2010
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