NP119N04NUK Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP119N04NUK
Package Drawing (Unit: mm)
TO-262 (MP-25SK) (Mass: 1.8 g TYP.)
Renesas Code: PRSS0004AM-A
10.0±0.2
4.45±0.2
1.3±0.2
4
123
2.54 TYP.
1.27±0.2
0.8±0.1
2.54 TYP.
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Gate
Drain
Body
Diode
Preliminary
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
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