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| NP119N04NUK Datasheet, PDF (1/8 Pages) Renesas Technology Corp – N-channel Power MOS FET | |||
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Preliminary Data Sheet
NP119N04NUK
40 V â 120 A â N-channel Power MOS FET
Application: Automotive
R07DS1252EJ0100
Rev.1.00
Mar 30, 2015
Description
The NP119N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
⢠Super low on-state resistance
RDS(on) = 2.15 mΩ MAX. (VGS = 10 V, ID = 60 A)
⢠Low Ciss: Ciss = 7400 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP119N04NUK-S18-AY *1 Pure Sn (Tin)
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current *2
IAR
Repetitive Avalanche Energy *2
EAR
Notes: *1 TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
*2 RG = 25 Ω, VGS = 20 V â 0 V
Ratings
40
±20
±120
±480
250
1.8
175
â55 to +175
56
313
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60 °C/W
83.3 °C/W
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 1 of 6
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