NP119N04NUK Datasheet, PDF (3/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP119N04NUK
Preliminary
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
I_D(Pulse) = 480 A
(VGS=10 V)
I_D(DC) = 120 A
100
PW _{= 100 μs}
Power Dissipation Limited
10
Secondary Breakdown Limited
1
T_C = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R_th(ch-A) = 83.3°C/W
10
1
R_th(ch-C) = 0.60°C/W
0.1
Single Pulse
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
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