NP119N04NUK Datasheet, PDF (4/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP119N04NUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
600
500
400
300
200
100
0
0
V_GS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1.0
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
V_DS = V_GS
I_D = 250 μA
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
3
2
1
V_GS = 10 V
Pulsed
0
1
10
100
1000
I_D - Drain Current - A
Preliminary
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
T_A = –55°C
–25°C
25°C
75°C
100°C
125°C
150°C
175°C
0.01 _{VDS = 10 V}
Pulsed
0.001
0
1
2
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
T_A = –55°C
–25°C
25°C
75°C
100
100°C
125°C
150°C
175°C
10
V_DS = 5 V
Pulsed
1
0.1
1
10
100
1000
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
3
I_D = 24 A
60 A
120 A
2
1
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
Page 4 of 6