NP119N04NUK Datasheet, PDF (5/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP119N04NUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
V_GS = 10 V
I_D = 60 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
td(off)
td(on)
tf
tr
1
10
V_DD = 20 V
V_GS = 10 V
R_G = 0 Ω
100
1000
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V_GS = 10 V
V_GS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
V_GS = 0 V
Crss
f = 1 MHz
100
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
30
V_DD = 32 V
12
20 V
25
8V
10
20
8
15
6
10
V_GS
4
5
V_DS
2
I_D = 120 A
0
0
0 20 40 60 80 100 120 140
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
1000
I_F - Drain Current - A
R07DS1252EJ0100 Rev.1.00
Mar 30, 2015
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