NE5550279A Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon Power LDMOS FET

NE5550279A
PACKAGE DIMENSIONS
79A (UNIT: mm)
4.2 MAX.
Source
Gate
Drain
(Bottom View)
1.5±0.2
Source
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
4.0
1.7
Source
Stop up the hole with a rosin or
something to avoid solder flow.
Gate
Drain
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
0.5 0.5
6.1
Through Hole: φ0.2 × 33
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