NE5550279A Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon Power LDMOS FET

Data Sheet
NE5550279A
Silicon Power LDMOS FET
R09DS0033EJ0100
Rev.1.00
Mar 28, 2012
FEATURES
• High Output Power
: P_out = 33.0 dBm TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 15 dBm)
• High power added efficiency : η_add = 68% TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 15 dBm)
• High Linear gain
: G_L = 22.5 dB TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 0 dBm)
• High ESD tolerance
• Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550279A
Order Number
NE5550279A-A
Package
79A
(Pb Free)
Marking
W7
Supplying Form
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
NE5550279A-T1 NE5550279A-T1-A
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
• Qty 1 kpcs/reel
NE5550279A-T1A NE5550279A-T1A-A
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550279A
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation ^Note
Channel Temperature
Storage Temperature
Note: Value at T_C = 25°C
Symbol
V_DS
V_GS
I_DS
I_DS-pulse
P_tot
T_ch
T_stg
Ratings
30
6.0
0.6
1.2
6.25
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
Page 1 of 7