NE5550279A Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon Power LDMOS FET

NE5550279A
TYPICAL CHARACTERISTICS 1 (T_A = 25°C)
R: f = 460 MHz, V_DS = 3.6/4.5/6/7.5/9 V, I_Dset = 40 mA, P_in = −10 to 20 dBm
IM: f1 = 460 MHz, f2 = 461 MHz, V_DS = 3.6/4.5/6/7.5/9 V, I_Dset = 40 mA, P_out (2 tone) = 8 to 32 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
40
1
Pout - 3.6 V
Pout - 4.5 V
35
Pout - 6.0 V
0.9
Pout - 7.5 V
Pout - 9.0 V
30 IDS - 3.6 V
0.8
IDS - 4.5 V
IDS - 6.0 V
25 _{IDS - 7.5 V}
0.7
IDS - 9.0 V
20
0.6
15
0.5
10
0.4
5
0.3
0
0.2
–5
0.1
–10
0
–15 –10 –5 0 5 10 15 20 25
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6.0 V
35 _{Gp - 7.5 V}
70
Gp - 9.0 V
D add - 3.6 V
30
D add - 4.5 V
D add - 6.0 V
60
D add - 7.5 V
D add - 9.0 V
25
50
20
40
15
30
10
20
5
10
0
0
–15 –10 –5 0 5 10 15 20 25
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 6.0 V
–10 ^{2f0 - 7.5 V}
2f0 - 9.0 V
–20
–30
–40
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 6.0 V
–50 ^{3f0 - 7.5 V}
3f0 - 9.0 V
–60
–70
5
10 15 20 25 30 35 40
Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 6.0 V
–10 ^{IM3 - 7.5 V}
IM3 - 9.0 V
IM5 - 3.6 V
IM5 - 4.5 V
–20 ^{IM5 - 6.0 V}
IM5 - 7.5 V
IM5 - 9.0 V
–30
–40
–50
–60
–70
5
10 15 20 25 30 35
2 Tones Output Power Pout (2 tone) (dBm)
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