N0439N Datasheet, PDF (6/7 Pages) Renesas Technology Corp – N-channel MOSFET 40 V, 90 A, 3.3 mΩ

N0439N
Package Drawings (Unit: mm)
TO-220
10.2 MAX.
8.7 TYP.
3.6±0.2
4.8 MAX.
1.3±0.2
4
1.52±0.2
0.8±0.1
2.54 TYP.
0.5±0.2
2.54 TYP.
2.4±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
RENESAS Package code : PRSS0004AP-A
Equivalent Circuit / Pin Assignment
2 , 4 : Drain
4
1 : Gate
Body
Diode
Remark
3 : Source
123
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
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