N0439N Datasheet, PDF (3/7 Pages) Renesas Technology Corp – N-channel MOSFET 40 V, 90 A, 3.3 mΩ

N0439N
TYPICAL CHARACTERISTICS (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
R_DS(ON)Limted
(V_GS=10V)
I_D(Pulse)=360A
100
I_D(DC)=90A
PW=100us
Power Dissipation Limited
10
Secondary Breakdown Limited
1
TC=25℃
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage – V
DRAIN CURRENT(DC) vs. CASE TEMPERATURE
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R _{t h(ch-A)}=83. 3℃/ W
10
R _{t h(ch-C)}=1. 02℃/ W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
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