N0439N Datasheet, PDF (4/7 Pages) Renesas Technology Corp – N-channel MOSFET 40 V, 90 A, 3.3 mΩ

N0439N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
350
300
250
200
150
100
50
0
0
V_GS=10V
Pulsed
0.2 0.4 0.6 0.8 1 1.2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
-100 -50 0
V_DS = V_GS
I_D=250μA
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
5
4
3
2
1
V_GS=10V
Pulsed
0
1
10
100
1000
I_D - Drain Current - A
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
FORWARD TRANSFER CHARACTERISTICS
100
10
T_A=-55℃
25℃
85℃
1
150℃
175℃
0.1
0.01
0.001
V_DS = 10V
Pulsed
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T_A=-55℃
25℃
85℃
150℃
175℃
10
1
0.1
V_DS=5V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
5
4
3
2
1
I_D=45A
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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