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| N0439N Datasheet, PDF (2/7 Pages) Renesas Technology Corp – N-channel MOSFET 40 V, 90 A, 3.3 mΩ | |||
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N0439N
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1. Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min.
2.0
30
Typ.
3.0
2.75
3900
530
200
25
12
65
8
68
18
18
0.95
47
68
Max.
1
±100
4.0
3.30
5850
800
360
60
30
130
20
102
1.5
Unit
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40V, VGS = 0 V
VGS = ± 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 20V, ID = 45 A
VGS = 10 V
RG = 0 Ω
VDD = 32V
VGS = 10 V
ID = 90 A
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 â 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
Ï
Ï = 1 μs
Duty Cycle ⤠1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
Page 2 of 6
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