N0439N Datasheet, PDF (5/7 Pages) Renesas Technology Corp – N-channel MOSFET 40 V, 90 A, 3.3 mΩ

N0439N
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
-100
0
V_GS=10V
I_D=45A
Pulsed
100
200
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
V_DD=20V
V_GS=10V
R_G=0Ω
1
0.1
1
10
I_D - Drain Current - A
t _{d(of f )}
t _d(on)
t_r
t_f
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V_GS=10V
V_GS=0V
10
1
0.1
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
V_F(S-D) - Source to Drain Voltage - V
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
V_GS=0V
f =1MHz
100
0.1
1
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
30
12
V_DD=32V
20V
25
8V
10
20
8
15
10
5
0
0
6
V_GS
4
V_DS
2
I_D=90A
0
10 20 30 40 50 60 70
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt=100A/u_ｓ
V_GS=0V
1
10
100
I_F - Drain Current - A
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