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N0439N Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-channel MOSFET 40 V, 90 A, 3.3 mΩ
Data Sheet
N0439N
N-channel MOSFET
40 V, 90 A, 3.3 mΩ
R07DS1065EJ0100
Rev.1.00
Jun 13, 2013
Description
This product is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Super low on-state resistance
RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
• Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V )
Ordering Information
Part No.
LEAD PLATING
PACKING
N0439N-S19-AY*1
Pure Sn (Tin)
Tube
50 p/tube
Note: *1. Pb-free ( This product does not contain Pb in the external electrode. )
TO-220
Package
TO-220 1.9g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25 °C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25 °C)
PT1
Total Power Dissipation (TA = 25 °C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current *2
IAR
Repetitive Avalanche Energy *2
EAR
Notes: ∗1. TC=25℃、Pw ≤ 10 μs, Duty Cycle ≤ 1%
∗2. RG = 25Ω, VGS = 20 Æ 0V
Ratings
40
± 20
± 90
± 360
147
1.8
175
-55 to 175
37
136
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.02
83.3
°C/W
°C/W
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
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