HAT1097R Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1097R, HAT1097RJ
10
Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1
0.1
0.01
0.001
0.05
0.02
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Rev.1.00, Feb.15.2005, page 6 of 7