|
HAT1097R Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching | |||
|
◁ |
HAT1097R, HAT1097RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 à 40 à 1.6 mm) PW ⤠10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
â10
â10 V
Pulse Test
â8
â6 V
â4.5 V
â6
â3.5 V
â100
â30
â10
â3
â1
â0.3
â0.1
â0.03
â0.01
Maximum Safe Operation Area
10 µs
100
OthpiseararetioaDnCisiOnperationP(WPW=<11N100ommtse)ss5
µs
limited by RDS(on)
â0.003
Ta = 25°C
1 shot Pulse
â0.001
â0.1 â0.3 â1
â3 â10 â30 â100
Drain to Source Voltage VDS (V)
Note 5: When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
Typical Transfer Characteristics
â10
VDS = â10 V
Pulse Test
â8
â6
â4
â4
â2
VGS =â2.5 V
0
â2 â4 â6 â8 â10
Drain to Source voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
â1
Pulse Test
â0.8
â0.6
â0.4
â0.2
0
0
ID = â5 A
â2 A
â1 A
â4 â8 â12 â16 â20
Gate to Source Voltage VGS (V)
â2
Tc = 75°C
25°C
â25°C
0
â1 â2 â3 â4 â5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 VGS = â4.5 V
0.05
â10 V
0.02
0.01
â1
â3
â10 â30
Drain Current ID (A)
â100
Rev.1.00, Feb.15.2005, page 3 of 7
|
▷ |