HAT1097R Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1097R, HAT1097RJ
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
–5 A
0.15
I_D = –1, –2 A
V_GS = –4.5 V
0.10
–5 A
0.05
0
–40
–10 V
–1, –2 A
0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
200
100
50
20
10
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –10 V
–25 V
–20
–50 V
–4
I_D = –5 A
–40
–8
V_DS
–60
V_DD = –10 V
–25 V
–80
–50 V
V_GS
–12
–16
–100 ₀
8
16 24 32
Gate Charge Qg (nc)
–20
40
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25°C
5
2
25°C
75°C
1
V _DS = –10 V
Pulse Test
0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
5000
Typical Capacitance vs.
Drain Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
Crss
20 V_GS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
td(off)
tr
30
t _d(on)
10
tf
3
V_GS = –10 V, V_DS = –30 V
PW = 5 µs, duty < 1 %
1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
Rev.1.00, Feb.15.2005, page 4 of 7