HAT1097R Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1097R, HAT1097RJ
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to Source breakdown voltage
Zero gate voltage drain current
Zero gate voltage
drain current
HAT1097R
HAT1055RJ
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_DSS
I_DSS
I_DSS
I_GSS
V_GS(off)
|y_fs|
R_DS(on)
R_DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
V_DF
trr
Min
–60
±20
—
—
—
—
–1.0
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
5
60
90
1350
135
85
21
3
4
20
15
55
10
–0.85
25
Max
—
—
–1
—
–10
±10
–2.5
—
76
130
—
—
—
—
—
—
—
—
—
—
–1.10
—
Unit
V
V
µA
µA
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0
Ta = 125°C
V_GS = ±16 V, V_DS = 0
V_DS = –10 V, I_D = –1 mA
I_D = –2.5 A^Note4, V_DS = –10 V
I_D = –2.5 A^Note4, V_GS = –10 V
I_D = –2.5 A^Note4, V_GS = –4.5 V
V_DS = –10 V, V_GS = 0
f = 1 MHz
V_DD = –25 V
V_GS = –10 V
I_D = –5 A
V_GS = –10 V, I_D= –2.5 A
V_DD ≅ –30 V
R_L = 12 Ω
R_G = 4.7 Ω
I_F = –5 A, V_GS = 0^Note4
I_F = –5 A, V_GS = 0
diF/dt = 100 A/µs
Rev.1.00, Feb.15.2005, page 2 of 7