HAT1097R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-A
(Previous code: SOP-8 <FP-8DA>)
56 7 8
DD D D
8 ^{7 65}
4
G
1 ²³⁴
SSS
123
REJ03G0529-0100
Rev.1.00
Feb.15.2005
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT1097R
HAT1097RJ
Drain to source voltage
Gate to source voltage
V_DSS
–60
–60
V_GSS
±20
±20
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
I_D
I_D (pulse)^Note1
I_APNote3
E_ARNote3
Pch^Note2
–5
–40
—
—
2
–5
–40
–5
2.14
2
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
°C
°C
Rev.1.00, Feb.15.2005, page 1 of 7