HAF2021 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2021(L), HAF2021(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
Shutdown Case Temperature vs.
Gate to Source Voltage
200
10
8
6
V DD= 16 V
4
2
0
0.0001
0.001
0.01
0.1
Shutdown Time of Load-Short Test Pw (S)
180
160
140
120
I _D= 5 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.3 _0.5
0.2
0.1
0.1
0.02
0.03
0.01
1shot ^pulse
0.01
10 µ
100 µ
θ_{ch- c(t) =} γ _{s (t) •} θ_{ch- c}
θ_{ch- c = 1.25°C/W, Tc = 25°C}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50Ω
VDD
= 30 V
Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Rev.2.00, Mar.05.2004, page 6 of 8