HAF2021 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G0179-0200Z
(Previous ADE-208-1459A(Z))
Rev.2.00
Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in
over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G
Gate resistor
Temperature
Sensing Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8