HAF2021 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOSFET Series Power Switching

HAF2021(L), HAF2021(S)
Static Drain to Source State Resistance
vs. Temperature
25
Pulse Test
20
25 A, 10 A
15
I_D = 50 A
V_GS = 6 V
10
I_D = 50 A
25 A, 10 A
5
V_GS = 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
200
100
50
20
10
12
5 10 20 50 100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20
V_GS = 5 V
10
0, -5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
50
V_DS = 10 V
Pulse Test
20
Tc = -25°C
10
5
2
25°C
1
75°C
0.5
0.2
0.1
0.1
0.5 1
5 10
50 100
Drain Current I_D (A)
1000
500
200
Switching Characteristics
V_GS = 10 V, V_DD = 30 V
PW = 300 µs, duty < 1 %
100
tr
50
td(on)
20
10
td(off)
5
2
tf
1
0.5 1
5 10
50 100 500
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
VGS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Rev.2.00, Mar.05.2004, page 5 of 8